US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 16 for "Semiconductor structure with an air gap, method for forming same, and stacked structure" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,984, issued on Sept. 16, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure with an air gap, method for forming same, and stacked structure" was invented by Luguang Wang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a base, including a substrate and a dielectric layer, the substrate being provided with a first front surface and a first back surface which are opposite, and the dielectric layer being located at the first front surface; a connecting hole, penetrating through the substrate and extending into the dielectric layer; a first insulating layer, located...