US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 16 for "Semiconductor structure and method for manufacturing semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,037, issued on Sept. 16, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for manufacturing semiconductor structure" was invented by Semyeong Jang (Hefei, China), Joonsuk Moon (Hefei, China), Deyuan Xiao (Hefei, China) and Jo-Lan Chin (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for manufacturing a semiconductor structure are provided, which relate to the technical field of semiconductors. The semiconductor structure includes a substrate and a plurality of first conductive layers. The substrate includes a plurality of first trenches extending...