US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 16 for "Semiconductor structure and method for forming same" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,028, issued on Sept. 16, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for forming same" was invented by Yi Tang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the disclosure provide a semiconductor structure and a method for forming the same. The method includes: providing a semiconductor substrate including a plurality of active pillars arranged at intervals; etching the active pillar to form an annular groove, in which the annular groove does not expose a top surface and a bottom surface of the active pillar; and forming a first semiconductor layer in the annula...