US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 16 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,036, issued on Sept. 16, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Gongyi Wu (Hefei, China), Xinran Liu (Hefei, China), Yachao Xu (Hefei, China) and Longyang Chen (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure relate to the field of semiconductor structures, and provide a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a base; a plurality of first conductive structures, located on a surface of the base and distributed at intervals along a first direct...