US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 16 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,033, issued on Sept. 16, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Yi Tang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a base; a bit line; a word line; an active pillar, wherein the active pillar includes a source region, a channel region, and a drain region, the bit line is connected to one of the source region and the drain region of the active pillar, and the word line surrounds the chann...