US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 16 for "Semiconductor structure and forming method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,029, issued on Sept. 16, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and forming method thereof" was invented by Sheng Li (Hefei, China) and Yang Chen (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A forming method of a semiconductor structure includes: providing a substrate including an array area and a peripheral area; forming a first insulating dielectric layer in the array area and the peripheral area at the same time, and etching the first insulating dielectric layer and the component dielectric layer in the array area; filling the plurality of trenches; performing back etching on th...