US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 16 for "Semiconductor structure, method for forming same, and layout structure" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,038, issued on Sept. 16, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure, method for forming same, and layout structure" was invented by Xiaojie Li (Hefei, China), Daohuan Feng (Hefei, China), Meng Huang (Hefei, China) and Yi Tang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the disclosure provide a semiconductor substrate, a method for forming same, and a layout structure. The method includes: providing a semiconductor structure including a first region and a second region arranged in sequence along a second direction, the second region including active structures arranged i...