US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 16 for "Protection ring, method for forming protection ring, and semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,105, issued on Sept. 16, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Protection ring, method for forming protection ring, and semiconductor structure" was invented by Xin Li (Hefei, China) and Zhan Ying (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A protection ring, a method for forming a protection ring, and a semiconductor structure are provided. The protection ring at least includes a buried protection structure. The buried protection structure is arranged in a semiconductor substrate. The buried protection structure is configured to protect a first functional structure formed inside the semiconductor subst...