US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 16 for "Method for forming storage node contact structure and semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,041, issued on Sept. 16, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for forming storage node contact structure and semiconductor structure" was invented by Erxuan Ping (Hefei, China), Zhen Zhou (Hefei, China), Lingguo Zhang (Hefei, China) and Weiping Bai (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method for forming a storage node contact structure and a semiconductor structure. The method for forming a storage node contact structure comprises: providing a substrate, bit line structures being formed on a surface of the substrate and contact holes being formed between the bit line structu...