US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 16 for "Metal grinding pretreatment in semiconductor device fabrication method" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,947, issued on Sept. 16, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Metal grinding pretreatment in semiconductor device fabrication method" was invented by Ke Ma (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to the technical field of semiconductors, and provides a method of manufacturing a semiconductor structure and a semiconductor structure. The method of manufacturing a semiconductor structure includes: providing an initial structure, wherein the initial structure includes a dielectric layer and an initial metal interconnect structure, the initial metal interconnect structure ...