US Patent Issued to Changxin Memory Technologies on Oct. 7 for "Semiconductor structure manufacturing method and semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,583, issued on Oct. 7, was assigned to Changxin Memory Technologies Inc. (Hefei, China).

"Semiconductor structure manufacturing method and semiconductor structure" was invented by Daohuan Feng (Hefei, China) and Xiaojie Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure manufacturing method includes: providing a substrate and forming a groove in the substrate; forming a barrier layer on a sidewall of the groove; epitaxially growing a channel material from a bottom of the groove to form an intermediate structure in the groove; and removing a portion of the intermediate structure and a portion of the substrate to ...