US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Oct. 7 for "Semiconductor structure and method for forming same" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,615, issued on Oct. 7, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for forming same" was invented by Meng Huang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure includes the following: providing a semiconductor substrate, in which stack structures and isolation structures alternately arranged along a first direction are formed on the semiconductor substrate; forming a support structure in the stack structures and the isolation structures; etching the stack structures and the isolation structures to form multiple zigzag first semiconduc...