US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Oct. 7 for "Method for manufacturing semiconductor device, and semiconductor device" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,677, issued on Oct. 7, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for manufacturing semiconductor device, and semiconductor device" was invented by Kejun Mu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a method for manufacturing a semiconductor device. The method includes: forming a gate insulating material layer on a substrate; forming a gate material layer on the gate insulating material layer; and performing an etching process on the gate material layer and the gate insulating material layer to form a gate layer and a gate insulating layer. The gate insulating layer and the gate layer eac...