US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Oct. 7 for "Method and apparatus of designing integrated circuit" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,137, issued on Oct. 7, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method and apparatus of designing integrated circuit" was invented by Chuanjiang Chen (Hefei, China), Li Tang (Hefei, China), Li Bai (Hefei, China) and Kang Zhao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method and an apparatus of designing an integrated circuit are provided. The method includes: S1, loading a power fill to a circuit layout with original metal lines; S2, checking whether a current layout includes a region with a spacing error; if yes, performing S3; otherwise, outputting the current layout; and S3, pruning a power fill shape...