US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Oct. 7 for "Memory device and ZQ calibration method" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,799, issued on Oct. 7, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Memory device and ZQ calibration method" was invented by Kai Tian (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes: two calibration resistor interfaces connected to the same ZQ calibration resistor; and a first master chip, first slave chips, a second master chip, and second slave chips, which are commonly connected to the ZQ calibration resistor; in a command mode, a first signal receiver is used to receive a ZQ calibration command, a second signal receiver is used to receive and delay the ZQ calibration command, each of the...