US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Oct. 28 for "Method for forming capacitor opening hole and method for forming memory capacitor" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,729, issued on Oct. 28, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for forming capacitor opening hole and method for forming memory capacitor" was invented by ChihCheng Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a capacitor opening hole and a method for forming a memory capacitor are provided. The method for forming a capacitor opening hole includes: providing a substrate, and forming a sacrificial layer and a supporting layer, which are stacked, on the surface of the substrate (S100); forming multiple hollow first side wall structures, spaced apart, on the surface of the supp...