US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Oct. 21 for "Word line structure, manufacturing method thereof and semiconductor memory" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,075, issued on Oct. 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Word line structure, manufacturing method thereof and semiconductor memory" was invented by ChihCheng Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A word line structure, a manufacturing method thereof, and a semiconductor memory are provided. The word line structure includes a first word line array and a second word line array. The first word line array includes a plurality of first word lines extending in an X direction. The first word lines have a same length and are aligned and arranged in a Y direction. The second word line array includ...