US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Oct. 21 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,158, issued on Oct. 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Jifeng Tang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a manufacturing method thereof, and relates to the technical field of semiconductors. The semiconductor structure includes a base, first contact structures, second contact structure, and third contact structures. The base includes an active region, and a source region, a gate region, and a drain region that are sequentially adjacent to each other are form...