US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Oct. 21 for "Method of manufacturing semiconductor structure and semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,112, issued on Oct. 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method of manufacturing semiconductor structure and semiconductor structure" was invented by Qinghua Han (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of manufacturing a semiconductor structure and a semiconductor structure, and relates to the technical field of semiconductors. The method of manufacturing a semiconductor structure includes: providing a base; forming a functional stack on the base, wherein the functional stack includes a first doped layer, a second doped layer and a third doped layer that ...