US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Oct. 21 for "Method for manufacturing semiconductor device and semiconductor device" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,169, issued on Oct. 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for manufacturing semiconductor device and semiconductor device" was invented by Jianping Wang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device and a semiconductor device are provided. The method includes: providing a substrate including a first area and a second area; forming a stacked material layer on the substrate, where the stacked material layer includes a first dielectric layer, a first conductive layer, and a second conductive layer; performing a first etching process on the stacked m...