US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Oct. 14 for "Three-dimensional semiconductor structure and formation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,206, issued on Oct. 14, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Three-dimensional semiconductor structure and formation method thereof" was invented by Yi Jiang (Hefei, China), Deyuan Xiao (Hefei, China), Youming Liu (Hefei, China), Xingsong Su (Hefei, China), Weiping Bai (Hefei, China) and Guangsu Shao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to a three-dimensional semiconductor structure and a formation method thereof. The three-dimensional semiconductor structure includes: a substrate; and a device structure positioned on a top surface of the substrate. The device structure include...