US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Oct. 14 for "Semiconductor structure and method for fabricating the same" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,209, issued on Oct. 14, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for fabricating the same" was invented by Dong Yan (Hefei, China), Zijie Wang (Hefei, China), Jun Wei (Hefei, China) and Wei Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a semiconductor structure and a method for fabricating the same. The method includes: providing a substrate; forming, in the substrate, active pillars spaced and isolation layers configured to isolate the active pillars; forming, in an active pillars and an isolation layers, word line trenches extending along a first dir...