ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,214, issued on Oct. 14, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).
"Semiconductor structure" was invented by Jianfeng Xiao (Hefei, China) and Xiaojie Li (Hefei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure. The semiconductor structure includes: a plurality of word lines extending along a first direction and arranged at intervals along a third direction; a plurality of semiconductor channels extending along a second direction and arranged at intervals along the third direction, wherein the word line surrounds the semiconductor channel along the third direction; a...