US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Oct. 14 for "Semiconductor structure, method for manufacturing same and memory" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,212, issued on Oct. 14, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure, method for manufacturing same and memory" was invented by Guangsu Shao (Hefei, China), Deyuan Xiao (Hefei, China), Yunsong Qiu (Hefei, China), Yi Jiang (Hefei, China) and Xingsong Su (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure includes providing a substrate; forming mutually parallel first trenches extending along a first direction in the substrate and first isolation structures filling the first trenches; forming mutually parallel second trenches extending along a s...