US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Nov. 4 for "Three-dimensional memory and method for forming same" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,711, issued on Nov. 4, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC (Hefei, China).

"Three-dimensional memory and method for forming same" was invented by Guangsu Shao (Hefei, China) and Deyuan Xiao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional memory and a method for forming the same are provided. The three-dimensional memory includes a substrate, a plurality of word lines and a plurality of lead lines. The word lines are located on the substrate. Each of the word lines extends in a first direction, and includes a first end and a second end opposite to the first end along the first direction. The lead lines are...