US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Nov. 4 for "Semiconductor structure and method for fabricating same" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,708, issued on Nov. 4, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for fabricating same" was invented by Yizhi Zeng (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a semiconductor structure and fabricating method. The method includes: providing a substrate having active structures, where each active structure has a bit line contact region; forming conductive support strips spaced along a first direction, where each conductive support strip extends along a second direction, each conductive support strip connects the bit line contact regions, the bit line contact...