US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Nov. 4 for "Semiconductor structure and method for fabricating same" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,785, issued on Nov. 4, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for fabricating same" was invented by Youming Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relates to a semiconductor structure and a method for fabricating the same. The method includes: providing a substrate, where an isolation trench is formed in the substrate; forming a first isolation layer in the isolation trench, where the first isolation layer fills the isolation trench, and a crack extending to an upper surface of the first isolation layer along a vertical direction is formed in the firs...