US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Nov. 4 for "Method of manufacturing semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,700, issued on Nov. 4, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method of manufacturing semiconductor structure" was invented by Jie Bai (Hefei, China) and Kang You (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to the technical field of semiconductor manufacturing, and provides a method of manufacturing a semiconductor structure. The method of manufacturing a semiconductor structure includes: providing a substrate; forming a mask layer on the substrate; removing a part of the mask layer on a non-array region; forming a first oxide layer on the non-array region; removing a part of...