US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Nov. 25 for "Semiconductor structure and method for fabricating same" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,283, issued on Nov. 25, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for fabricating same" was invented by Wei Wan (Hefei, China), Shuai Zhang (Hefei, China) and Chunyu Xiu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to a semiconductor structure and a method for fabricating the same. The semiconductor structure includes: a base substrate including a trench, where the trench includes a gate structure whose top surface is lower than a top surface of the trench; first etch stop layers, where the first etch stop layers cover the top surface of the gate structure...