US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Nov. 25 for "Method for manufacturing semiconductor structure, semiconductor structure and three-dimensional structure" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,209, issued on Nov. 25, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for manufacturing semiconductor structure, semiconductor structure and three-dimensional structure" was invented by Xiaojie Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes: providing a substrate including a first region and a second region; a stacked structure being formed on the substrate, the stacked structure including a first semiconductor layers and a second semiconductor layers stacked alternately in sequence along a direction perpendicular to a plane where the substrate is located; etching the stacked structure, ...