US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Nov. 25 for "Circuit for receiving data and memory" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,516, issued on Nov. 25, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Circuit for receiving data and memory" was invented by Bingxin Wei (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A circuit for receiving data includes a voltage generating circuit, a data circuit and a selection circuit. The voltage generating circuit is configured to output, in a first mode, a first reference voltage signal and a second reference voltage signal. The data circuit is configured to compare the data signal with the first reference voltage signal, output a first target signal, compare the data signal with the second reference voltag...