US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Nov. 18 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,717, issued on Nov. 18, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Daohuan Feng (Hefei, China) and Xiaojie Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure relate to the field of semiconductors, and provide a semiconductor structure and a manufacturing method thereof. The method of manufacturing a semiconductor structure includes: providing a base, and forming active pillars, a bit line, a word line, and memory structures. Forming the memory structures includes: providing an isolation layer between th...