US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Nov. 18 for "Semiconductor structure and manufacturing method of semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,200, issued on Nov. 18, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method of semiconductor structure" was invented by Zhiyuan Lu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a semiconductor structure includes: providing substrate including array area and peripheral area, where peripheral area includes mark area and blank area adjoining mark area; forming, on substrate, target layer and first core layer disposed on target layer, first core layer including first array core layer disposed on array area, first mark core layer disposed on mark area...