US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Nov. 18 for "Delay control circuit and method, and semiconductor memory" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,475,938, issued on Nov. 18, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Delay control circuit and method, and semiconductor memory" was invented by Zequn Huang (Hefei, China) and Kai Sun (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided in the embodiments of the present disclosure are a delay control circuit and method, and a semiconductor memory. The delay control circuit includes a clock circuit and a delay circuit. The clock circuit is configured to receive a temperature adjustment signal, and generate a first clock signal according to the temperature adjustment signal; and a clock cycle of the first clock s...