US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Nov. 11 for "Transistor structure, semiconductor structure and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,325, issued on Nov. 11, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Transistor structure, semiconductor structure and fabrication method thereof" was invented by Hui Xue (Hefei, China), Wentao Xu (Hefei, China), Yutong Shen (Hefei, China) and Inho Park (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a transistor structure, a semiconductor structure and a fabrication method thereof. The method for fabricating a transistor structure includes: providing a substrate; forming a channel layer on an upper surface of the substrate, the channel layer including a two-dimensional layered transition metal ...