US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Nov. 11 for "Transistor and manufacturing method thereof, and memory" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,267, issued on Nov. 11, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Transistor and manufacturing method thereof, and memory" was invented by Youming Liu (Hefei, China) and Deyuan Xiao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a transistor and a manufacturing method thereof, and a memory, relates to the technical field of semiconductors. The transistor includes: a channel, wherein an accommodation space is formed therein; a gate, provided with a first end and a second end that are opposite, wherein the first end of the gate is located inside the accommodation space, and the sec...