US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Nov. 11 for "Semiconductor structure and method for manufacturing same, and memory" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,271, issued on Nov. 11, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for manufacturing same, and memory" was invented by Ning Xi (Anhui, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "There are provided a semiconductor structure and a method for manufacturing the same, and a memory. The method for manufacturing a semiconductor structure includes: providing a stack structure including a first dielectric layer containing a first element; forming a first groove at least penetrating through the first dielectric layer by a first etching process, wherein after the first etching process, a firs...