ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,274, issued on Nov. 11, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).
"Semiconductor structure" was invented by Deyuan Xiao (Hefei, China), Kanyu Cao (Hefei, China) and Yiming Zhu (Hefei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the disclosure provide a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes: a substrate; a semiconductor pillar located on the substrate and a gate pillar located on the semiconductor pillar, in which the semiconductor pillar and the gate pillar both extend in a direction perpendicular to a plane of the substrate; a first word ...