US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Nov. 11 for "Preparation method for capacitor structure, capacitor structure, and memory" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,697, issued on Nov. 11, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Preparation method for capacitor structure, capacitor structure, and memory" was invented by Xingsong Su (Hefei, China), Weiping Bai (Hefei, China), Mengkang Yu (Hefei, China) and Lianhong Wang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A preparation method for the capacitor structure includes: forming a dielectric layer on a first electrode, wherein, the dielectric layer includes a first amorphous layer and a high dielectric constant layer which are stacked, the first amorphous layer maintaining an amorphous structure after annealing, and th...