US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Nov. 11 for "Memory with arrays of sense amplifiers and two error checking and correction (ECC) modules" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,576, issued on Nov. 11, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Memory with arrays of sense amplifiers and two error checking and correction (ECC) modules" was invented by Weibing Shang (Hefei, China), Yicheng Gao (Hefei, China) and Hangtian Ba (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a memory and a memory system thereof, relating to the technical field of semiconductors. The memory includes: memory sections and a plurality of bit lines (BLs) corresponding to a same memory section; sense amplifiers electrically connected to the plurality of BLs in one-to-one correspondenc...