US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Nov. 11 for "Equalization circuit structure and manufacturing method thereof, sense amplification circuit structure and memory circuit structure" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,782, issued on Nov. 11, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Equalization circuit structure and manufacturing method thereof, sense amplification circuit structure and memory circuit structure" was invented by Yang Zhao (Hefei, China) and Jaeyong Cha (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An equalization circuit structure includes a semiconductor substrate including an equalization active region; a gate layer including a gate pattern and a power supply line, wherein the gate pattern is disposed on the equalization active region and configured for forming a transistor unit with the equalization acti...