US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 6 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,295,151, issued on May 6, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Pan Yuan (Hefei, China), Xingsong Su (Hefei, China), Qiang Zhang (Hefei, China) and Zhan Ying (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide a semiconductor structure and a manufacturing method thereof. The manufacturing method includes: providing a base; forming a bottom electrode layer on the base, wherein a crystal structure of the bottom electrode layer includes a tetragonal crystal system; forming a first dielectric layer on ...