US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 6 for "Memory structure including elastic material based buffer column structure near contact structure to improve stability of connection" (Chinese Inventor)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,293,979, issued on May 6, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Memory structure including elastic material based buffer column structure near contact structure to improve stability of connection" was invented by Cheng-Jer Yang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a memory structure, including: a capacitive structure, provided with an upper electrode layer; a conductive column, arranged on the upper electrode layer, and in contact with and electrically connected to the upper electrode layer; a metal layer, arranged on a side of the conductive column away from the upper electrode la...