US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 6 for "Memory device, and semiconductor structure and forming method thereof" (Chinese Inventor)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,295,135, issued on May 6, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Memory device, and semiconductor structure and forming method thereof" was invented by Shih-Hung Lee (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to the technical field of semiconductors, and provides a memory device, and a semiconductor structure and a forming method thereof. The forming method includes: providing a substrate, where the substrate includes a source region and a drain region spaced apart from each other, and a gate trench located between the source region and the drain region; forming, in sequence on...