US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 27 for "Word line driver, word line driver array, and semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,596, issued on May 27, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Word line driver, word line driver array, and semiconductor structure" was invented by Sungsoo Chi (Hefei, China), Fengqin Zhang (Hefei, China) and Shuyan Jin (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide a word line driver, a word line driver array, and a semiconductor structure, relating to the technical field of semiconductors. The word line driver includes: a zeroth P-channel metal oxide semiconductor (PMOS) transistor, a zeroth N-channel metal oxide semiconductor (NMOS) transistor, and a first NM...