US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 27 for "Semiconductor structures of anti-fuse devices and core devices with different dielectric layers" (Chinese Inventor)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,799, issued on May 27, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structures of anti-fuse devices and core devices with different dielectric layers" was invented by Xianlei Cao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a core device region and an anti-fuse device region, disposed on a same substrate; a first dielectric layer, disposed on the substrate of the core device region and the anti-fuse device region, wherein the first dielectric layer has a first dielectric constant; a second dielectric layer, disposed on the first dielectric layer of the core devic...