US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 27 for "Semiconductor structure having isolation structure embedded in the groove of the bit line" (Chinese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,483, issued on May 27, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure having isolation structure embedded in the groove of the bit line" was invented by Guangsu Shao (Hefei, China) and Deyuan Xiao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to a semiconductor structure and a method for fabricating. The semiconductor structure includes: a substrate, word lines, bit lines, and word line isolation structures. Active pillars arranged in an array are provided on a surface of the substrate, and the active pillars include channel regions, and a top doped region positioned on an...