US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 27 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,795, issued on May 27, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Luguang Wang (Hefei, China) and Xiaoling Wang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a semiconductor structure and a manufacturing method thereof. The method of manufacturing the semiconductor structure includes: providing a base, the base including a substrate and a first dielectric layer on the substrate; forming a through silicon via in the base, the through silicon via penetrating through the first dielectric layer, extending into...