US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 27 for "Semiconductor structure and fabrication method thereof, and memory" (Chinese Inventor)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,487, issued on May 27, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and fabrication method thereof, and memory" was invented by Heng-Chia Chang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure relate to the field of semiconductors, and provide a semiconductor structure and a fabrication method thereof, and a memory. The semiconductor structure includes: a base substrate including a first side and a second side opposite to each other; a first device layer including a first device, the first device layer being arranged on the first side of the base substrat...