US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 27 for "Semiconductor device, semiconductor structure and formation method thereof" (Chinese Inventor)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,470, issued on May 27, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor device, semiconductor structure and formation method thereof" was invented by Ping-Heng Wu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device, a semiconductor structure and a formation method thereof, and relates to the field of semiconductor technologies. The formation method includes: providing a substrate, and forming a sacrificial layer on the substrate; patterning the sacrificial layer to form trenches and through holes distributed side by side in the sacrificial layer; forming ...